Molecular Beam Epitaxial Growth of III-Nitride Nanostructures
We study the epitaxial growth and characterization of high-quality III-nitride nanowires on both Si, sapphire and other substrates for optoelectronic devices including light-emitting diodes (LEDs), lasers diodes, solar cells, solar fuel cells, and photodetectors.
PI/Collaborators:
Hieu P Nguyen
Assistant Professor, Electrical and Computer Engineering
hieu.p.nguyen@njit.edu