We are developing single- and multi-junction InGaN nanowire solar cells on a Si platform. Nanowires will be grown directly on Si substrates under nitrogen rich conditions by MBE. By varying the indium and gallium compositions in the nanowire, the nanowire bandgap, or the absorption spectra, can be optimized to achieve solar cells with improved efficiency.
PI/Collaborators:
Hieu P Nguyen
Assistant Professor, Electrical and Computer Engineering hieu.p.nguyen@njit.edu