Ultra-Wide BandGap Semiconductors (UWBGS)
Funding Agency:
- Department of Defense
The Microsystems Technology Office at DARPA seeks innovative proposals to develop foundational ultra-wide bandgap (UWBG) materials (substrate, device layers, and junctions) and
low resistance electrical contacts necessary for realization of devices that enable UWBG
applications. In particular, DARPA seeks proposals in the following areas: 1) low defect density,
large area (100 mm diameter), epi-ready, UWBG substrates and 2) uniform, low defect density
UWBG device layers with high doping efficiency, abrupt homo- and/or hetero-junctions with low
junction defect density (1012/cm2), and ultra-low resistance electrical contacts (2 x 10-6 ohm-cm2).
It is anticipated that the technical approaches to meet these goals will be different, and therefore,
separate proposals are required for each Technical Area. Proposed research should investigate
innovative approaches that enable revolutionary advances in materials, devices, circuits, and
systems. Specifically excluded is research that primarily results in evolutionary improvements to
the existing state of practice.
Multiple awards are anticipated.
December 15, 2023
Dr. Thomas Kazior, Program Manager
BAA Coordinator: HR001123S0051@darpa.mil
DARPA/MTO
ATTN: HR001123S0051
675 North Randolph Street
Arlington, VA 22203-2114